منابع مشابه
Comparison of Conventional 6T SRAM cell and FinFET based 6T SRAM Cell Parameters at 45nm Technology
When working for low power application the main estimation is to reduce leakage components and parameters. This stanza explores a vast link towards low leakage power SRAM cells using new technology and devices. The RAM contains bi-stable cross coupled latch which has V_th higher in write mode access MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and lower V_th in read access mode MO...
متن کاملA Comparative Study of 6T, 8T and 9T SRAM Cell
From the last few decades, the scaling down of CMOS devices have been taking place to achieve better performance in terms of speed, power dissipation, size and reliability. The major area of concern in today‟s CMOS technology is Data retention and leakage current reduction. SRAM (Static Random Access Memory) is memory used to store data. Conventional Static Random Access Memory (SRAM) cells suf...
متن کاملStatic Write Margin and Power for 6T & 7T SRAM Cell: A Comparison
SRAM cell read stability and write-ability are major concerns in CMOS technologies, due to the progressive increase in VDD and transistor scaling. In this paper, we studied and comparedthe performance of 7TN (with NMOS access transistor), 7TP (with PMOS access transistor) andconventional 6T structure.SRAM cells have been simulated in SPICE with 0.35 μm technology. The techniques that provide th...
متن کاملA Dependable SRAM with 7T/14T Memory Cells
This paper proposes a novel dependable SRAM with 7T/14T memory cells, and introduces a new concept, “quality of a bit (QoB)” for it. The proposed SRAM has three modes: a normal mode, highspeed mode, and dependable mode, and dynamically scales its reliability, power and speed by combining two memory cells for one-bit information (i.e. 14 T/bit). By carrying out Monte Carlo simulation in a 65-nm ...
متن کاملA Study on Conventional SRAM and Adiabatic SRAM
Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on a semiconductor-based integrated circuit. It is made in many different types and technologies. Most modern semiconductor memory devices are implemented allowing random access, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed...
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ژورنال
عنوان ژورنال: International Journal of Research in Engineering and Technology
سال: 2018
ISSN: 2321-7308,2319-1163
DOI: 10.15623/ijret.2018.0702010